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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFU310LT1/D
JFET Transistor
N-Channel
2 SOURCE 3 GATE
MMBFU310LT1
Motorola Preferred Device
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 - 08, STYLE 10 SOT- 23 (TO - 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 - 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (IG = -1.0 Adc, VDS = 0) Gate 1 Leakage Current (VGS = -15 Vdc, VDS = 0) Gate 2 Leakage Current (VGS = -15 Vdc, VDS = 0, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V(BR)GSS IG1SS IG2SS VGS(off) - 25 -- -- - 2.5 -- - 150 - 150 - 6.0 Vdc pA nAdc Vdc
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 10 mAdc, VDS = 0) IDSS VGS(f) 24 -- 60 1.0 mAdc Vdc
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = -10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) 1. FR- 5 = 1.0 |Yfs| |yos| Ciss Crss 10 -- -- -- 18 250 5.0 2.5 mmhos mhos pF pF
0.75 0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996
1
MMBFU310LT1
50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 - 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539-002D. C5 = C6 = 5000 pF Erie (2443-000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 H Miller #9230-30. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 LOAD
Figure 1. 450 MHz Common-Gate Amplifier Test Circuit
60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 -5.0 IDSS + 25C + 25C TA = - 55C
60 50 40 +150C + 25C - 55C 30 20
IDSS, SATURATION DRAIN CURRENT (mA)
70
70
Yfs , FORWARD TRANSCONDUCTANCE (mmhos)
35 30 25 20 15 10 +150C + 25C - 55C +150C VDS = 10 V f = 1.0 MHz TA = - 55C + 25C
+150C 10 0 0
5.0 0 5.0 4.0 3.0 2.0 1.0 0
-1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer Characteristics versus Gate-Source Voltage
Figure 3. Forward Transconductance versus Gate-Source Voltage
Yfs , FORWARD TRANSCONDUCTANCE (mhos)
100 k Yfs
1.0 k Yos, OUTPUT ADMITTANCE ( mhos)
10 RDS CAPACITANCE (pF) 7.0
120 R DS , ON RESISTANCE (OHMS)
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
VGS(off) = - 2.3 V = VGS(off) = - 5.7 V =
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Common-Source Output Admittance and Forward Transconductance versus Drain Current
Figure 5. On Resistance and Junction Capacitance versus Gate-Source Voltage
2
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MMBFU310LT1
30 VDS = 10 V ID = 10 mA TA = 25C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00
|Y11|, |Y21 |, |Y22 | (mmhos)
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0
Figure 6. Common-Gate Y Parameter Magnitude versus Frequency
21, 11 180 50 22 170 40 21 12, 22 - 20 87 - 20 - 40 - 60 - 80 - 100 150 20 12 11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 - 120 84 - 140 - 160 83 - 180 - 200 82 1000 - 120 - 100 - 80 85 - 60 86
Figure 7. Common-Gate S Parameter Magnitude versus Frequency
11, 12 - 20 120 21 21, 22 11 22 0
- 40 100
- 20
160
30
80
- 40
60 12 40 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz)
21 11
- 60
- 80
130
0 100
200 300 500 f, FREQUENCY (MHz)
20 100
700
- 100 1000
Figure 8. Common-Gate Y Parameter Phase-Angle versus Frequency
Figure 9. S Parameter Phase-Angle versus Frequency
8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1
24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24
7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22
Figure 10. Noise Figure and Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain versus Frequency
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
MMBFU310LT1
C1 S G L1 INPUT RS = 50 C2 L2 C3 U310 D C4 L3 C5 L4 C6 BW (3 dB) - 36.5 MHz ID - 10 mAdc VDS - 20 Vdc Device case grounded IM test tones - f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 1-10 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.5-6 pF Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 1-5/8 copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 x 1/32 x 1-7/8 copper bar.
OUTPUT RL = 50
VS
SHIELD
VD
Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40 OUTPUT POWER PER TONE (dBm) +20 0 -20 -40 -60 -80 -100 -120 -120
U310 JFET VDS = 20 Vdc ID = 10 mAdc F1 = 449.5 MHz F2 = 450.5 MHz
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two in-band signals of -20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of -90 dBm. Also, each signal level at the output will be -11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20
3RD ORDER IMD OUTPUT
-100
-40 -20 -60 -80 INPUT POWER PER TONE (dBm)
Figure 13. Two Tone 3rd Order Intercept Point
4
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MMBFU310LT1
INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION
The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
Motorola Small-Signal Transistors, FETs and Diodes Device Data
5
MMBFU310LT1
PACKAGE DIMENSIONS
A L
3
BS
1 2
STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60
V
G
C D H K J
DIM A B C D G H J K L S V
CASE 318-08 ISSUE AE SOT-23 (TO-236AB)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
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6
MMBFU310LT1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data
*MMBFU310LT1/D*

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